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| Power Transistors 2SA1535, 2SA1535A Silicon PNP epitaxial planar type For low-frequency driver and high power amplification Complementary to 2SC3944, 2SC3944A Features * Excellent collector current IC characteristics of forward current transfer ratio hFE * High transition frequency fT * A complementary pair with 2SC3944 and 2SC3944A, is optimum for the driver-stage of a 60 W to 100 W output amplifier 16.70.3 Unit: mm 0.70.1 10.00.2 5.50.2 4.20.2 4.20.2 2.70.2 7.50.2 3.10.1 Solder Dip (4.0) 1.40.1 1.30.2 0.5+0.2 -0.1 14.00.5 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) 2SA1535 2SA1535A VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating -150 -180 -150 -180 -5 -1 -1.5 15 2 Junction temperature Storage temperature 150 -55 to +150 C C V A A W V Unit V 0.80.1 2.540.3 5.080.5 123 Collector-emitter voltage 2SA1535 (Base open) 2SA1535A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation TC = 25C 1 : Base 2 : Collector 3 : Emitter EIAJ : SC-67 TO-220F-A1 Package Electrical Characteristics Ta = 25C 3C Parameter Collector-emitter voltage (Base open) 2SA1535 2SA1535A VEBO ICBO hFE1 * hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob 2SA1535 Symbol VCEO Conditions IC = -100 A, IB = 0 IC = -100 A, IB = 0 IE = -10 A, IC = 0 VCB = -150 V, IE = 0 VCE = -10 V, IC = -150 mA VCE = -5 V, IC = -500 mA IC = -500 mA, IB = -50 mA IC = -500 mA, IB = -50 mA VCE = -10 V, IC = -50 mA, f = 10 MHz VCB = -10 V, IE = 0, f = 1 MHz 65 50 160 100 - 0.5 -1.0 200 30 50 -2.0 -2.0 V V MHz pF Min -150 -180 -5 -10 330 V A Typ Max Unit V Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Publication date: February 2003 P 65 to 110 Q 90 to 155 R 130 to 220 SJD00008BED S 185 to 330 1 2SA1535, 2SA1535A PC Ta Collector-emitter saturation voltage VCE(sat) (V) 20 VCE(sat) IC Base-emitter saturation voltage VBE(sat) (V) IC/IB=10 VBE(sat) IC -10 IC/IB=10 Collector power dissipation PC (W) (1) (1)TC=Ta (2)Without heat sink (PC=2W) 15 -1 -1 TC=-25C 100C 25C 10 TC=100C 25C -25C - 0.1 5 (2) - 0.1 0 0 40 80 120 160 - 0.01 - 0.01 - 0.1 -1 - 0.01 - 0.01 - 0.1 -1 Ambient temperature Ta (C) Collector current IC (A) Collector current IC (A) hFE IC VCE=-10V fT I E Collector output capacitance C (pF) (Common base, input open circuited) ob 400 VCB=-10V f=10MHz TC=25C Cob VCB 100 IE=0 f=1MHz TC=25C 1 000 Forward current transfer ratio hFE Transition frequency fT (MHz) 80 25C TC=-25C 300 100 100C 60 200 40 10 100 20 1 - 0.01 -0.1 -1 0 0.01 0.1 1 0 -1 -10 -100 Collector current IC (A) Emitter current IE (A) Collector-base voltage VCB (V) Safe operation area -10 ICP Single pulse TC=25C Collector current IC (A) -1 t=1ms IC t=<50s DC t=10ms - 0.1 - 0.01 2SA1535A 2SA1535 - 0.001 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) 2 SJD00008BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL This datasheet has been download from: www..com Datasheets for electronics components. |
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